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Ukudityaniswa kwakhona kwee-electron kunye nemingxuma kumphezulu kunye naluphi na ujongano yeyona nto iphambili ethintela ukusebenza kakuhle kweeseli, kwaye
iitekhnoloji ezahlukeneyo ze-passivation ziye zaphuhliswa ukunciphisa ukudityaniswa kwakhona, ukusuka kwinqanaba lokuqala le-BSF (I-Back Surface Field) ukuya kwi-PERC eyaziwayo ngoku (i-Emitter Passivated kunye ne-Rear Cell), i-HJT yakutshanje (i-Heterojunction) kunye ne-TOPCon technologies namhlanje. I-TOPCon bubuchwephesha bokudlula obuphambili, obuhambelana nohlobo lwe-P kunye nohlobo lwe-N-wafers ye-silicon kwaye inokuphucula kakhulu ukusebenza kakuhle kweeseli ngokukhulisa umaleko ocwecwe ocwecwe kakhulu we-oxide kunye nomaleko we-polysilicon emva kweseli ukwenza okulungileyo. i-interfacial passivation. Xa kudityaniswe ne-N-uhlobo lwe-silicon wafers, umda ophezulu wokusebenza kakuhle kweeseli ze-TOPCon uqikelelwa ukuba yi-28.7%, ngaphandle kwe-PERC, eya kuba malunga ne-24.5%. Ukusetyenzwa kwe-TOPCon kuhambelana ngakumbi nemigca yemveliso ye-PERC ekhoyo, ngaloo ndlela ilinganisa iindleko ezingcono zokuvelisa kunye nokusebenza okuphezulu kwemodyuli. I-TOPCon kulindeleke ukuba ibe yitekhnoloji yeeseli eziqhelekileyo kwiminyaka ezayo.